Fabrication of p-n junction diodes from phthalocyanine and electropolymerized perylene derivatives

被引：0
|
作者：
Kudo, T [1 ]
Kimura, M [1 ]
Hanabusa, K [1 ]
Shirai, H [1 ]
机构：
[1] Shinshu Univ, Fac Text Sci & Technol, Dept Funct Polymer Sci, Ueda, Nagano 386, Japan
来源：
JOURNAL OF PORPHYRINS AND PHTHALOCYANINES | 1998年 / 2卷 / 03期
关键词：
N,N '-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide electrodeposition; phthalocyanine; p-n junction diode; Zener-type breakdown; photocurrent enhancement;
D O I：
10.1002/(SICI)1099-1409(199805/06)2:3<231::AID-JPP82>3.3.CO;2-J
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Perylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N,N'-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl2, PbCl2, ZnCl2 or CoBr2 as a supporting electrolyte in N,N-dimethylformamide (DME). The pn junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca2+ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes. (C) 1998 John Wiley & Sons, Ltd.
引用
收藏
页码：231 / 235
页数：5
相关论文
共 50 条
  • [21] Harmonic generation by nondegenerate p-n junction varactor diodes
    Abuelma'atti, Muhammad Taher
    Active and Passive Electronic Components, 1997, 19 (04): : 205 - 215
  • [22] The response of Si p-n junction diodes to proton irradiation
    Simoen, E
    Vanhellemont, J
    Claeys, C
    Kaniava, A
    Gaubas, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (10) : 1434 - 1442
  • [23] Simulation of carbon nanotube based p-n junction diodes
    Li, Jingqi
    Zhang, Qing
    Chan-Park, Mary B.
    CARBON, 2006, 44 (14) : 3087 - 3090
  • [24] PERFORMANCE COMPARISON OF p-n JUNCTION DIODES USING ZINC OXIDE AND COPPER PHTHALOCYANINE HYBRID NANOCOMPOSITES AND BILAYER HETEROSTRUCTURES
    Padma, N.
    Ghosh, Manoranjan
    Sen, Shashwati
    Tewari, R.
    NANO, 2014, 9 (06)
  • [25] Novel hydrogen bonding composite based on copper phthalocyanine/perylene diimide derivatives p-n heterojunction with improved photocatalytic activity
    Wang, Hailong
    Zhao, Lele
    Liu, Xueqiang
    Xu, Jing
    Hou, Wenlong
    Wang, Jianmin
    He, Enfang
    Zhang, Ruijun
    Zhang, Haiquan
    DYES AND PIGMENTS, 2017, 137 : 322 - 328
  • [26] GENERATION OF HARMONICS AND SUBHARMONICS AT MICROWAVE FREQUENCIES WITH P-N JUNCTION DIODES
    LEENOV, D
    UHLIR, A
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (10): : 1724 - 1729
  • [27] ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE P-N JUNCTION TUNNEL DIODES
    IMENKOV, AN
    MESKIN, SS
    NASLEDOV, DN
    RAVICH, VN
    TSARENKO.BV
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 1808 - +
  • [28] NOISE CURRENT IN P-N JUNCTION DIODES AT HIGH REVERSE CURRENTS
    TAKAGI, K
    MANO, K
    SOLID-STATE ELECTRONICS, 1971, 14 (06) : 524 - +
  • [29] Accurate extraction of the diffusion current in silicon p-n junction diodes
    Simoen, E
    Claeys, C
    Czerwinski, A
    Katcki, J
    APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1054 - 1056
  • [30] Peripheral current analysis of silicon p-n junction and gated diodes
    Czerwinski, A
    Simoen, E
    Poyai, A
    Claeys, C
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6506 - 6514
12345