Annealing effects on lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates

被引：15
|
作者：
Mishima, T [1 ]
Kudo, M [1 ]
Kasai, J [1 ]
Higuchi, K [1 ]
Nakamura, T [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
关键词：
MBE; InGaAs; strain-relax; anneal; mobility; photoluminescence; metamorphic;
D O I：
10.1016/S0022-0248(98)01338-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-temperature (600 degrees C) annealing, done to improve the electrical and optical qualities of lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates at low temperatures, significantly improved the Hall mobilities of a n-In0.5Ga0.5As:Si layer, a n-In0.5Al0.5As:Si layer and a modulation-doped structure, but only slightly reduced sheet electron densities, if at all. This is in contrast to previous reports on fluorine termination of Si donors, which described significant degradation of electrical properties. The annealed single-quantum-well layer samples showed a photoluminescence intensity double that of the as-grown samples while maintaining the same line widths. These results suggest that the annealing did not increase the number of lattice-misfit dislocations, and transmission-electron microscopy and high-resolution photoluminescence microscopy confirmed this. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：271 / 275
页数：5
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