Size-controlled InGaN/GaN nanorod array fabrication and optical characterization

被引：28

作者：

Bae, Si-Young ^{[1
]}

Kong, Duk-Jo ^{[1
]}

Lee, Jun-Yeob ^{[1
]}

Seo, Dong-Ju ^{[1
]}

Lee, Dong-Seon ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 14期

关键词：

LIGHT-EMITTING-DIODES; MULTIPLE-QUANTUM WELLS; DRY-ETCH DAMAGE; EXTRACTION EFFICIENCY; NANOSPHERE LITHOGRAPHY; LATERAL OVERGROWTH; AREA GROWTH; GAN; SURFACE; HETEROSTRUCTURES;

D O I：

10.1364/OE.21.016854

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a cost-effective top-down approach for fabricating InGaN/GaN nanorod arrays using a wet treatment process in a KOH solution. The average diameter of the as-etched nanorods was effectively reduced from 420 nm to 180 nm. The spatial strain distribution was then investigated by measuring the high-resolution cathodoluminescence directly on top of the nanorods. The smaller nanorods showed a higher internal quantum efficiency and lower potential fluctuation, which can subsequently be exploited for high-efficiency photonic devices. (C) 2013 Optical Society of America

引用

页码：16854 / 16862

页数：9

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