Drastic change in electronic structure of AlGaN under Ba adsorption

被引：4

作者：

Benemanskaya, Galina ^{[1
]}

Timoshnev, Sergey ^{[1
]}

Ivanov, Sergey ^{[1
]}

Jmerik, Valentin ^{[1
]}

Marchenko, Dmitry ^{[2
]}

机构：

[1] AF Ioffe Phys Tech Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia

[2] Helmholtz Zentrum Berlin Mat & Energie, Elektronenspeicherr BESSY II, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

III-nitrides; metal/AlGaN interface; electronic surface structure; accumulation layer; photoemission spectroscopy; CHARGE ACCUMULATION; SURFACE; PHOTOEMISSION; LAYER; GAN;

D O I：

10.1002/pssc.201200692

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A synchrotron-radiation photoemission spectroscopy is applied to the clean and Ba-deposited AlGaN(0001) surfaces to investigate the interface electronic structure relevant to both the surface states and an electron accumulation layer and to clarify their origins. Valence-band photoemission and Ga 3d, Al 2p, Ba 4d core level spectra of AlxGa1-xN (x=0.16, x=0.42) have been studied under the step-by-step Ba submonolayer deposition. The clean n-Al0.16Ga0.84N surface exhibits the surface states at energies of 2.8 eV, 5.5 eV, and 7.8 eV with respect to the valence band maximum, while the states for the clean Al0.42Ga0.58N surface are at higher energies of 3.9 eV, 5.6 eV, and 8.2 eV. Drastic change in the valence band spectra is revealed and it is showed that narrowing of valence band and suppression of surface states occur with increasing Ba coverage. The appearance of a new photoemission peak at the Fermi level clearly indicates the creation of the accumulation layer on the n-Al0.16Ga0.84N surface under the Ba adsorption. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：494 / 497

页数：4

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