Temperature-dependent contact resistivity of radio frequency superimposed direct current sputtered indium tin oxide ohmic contact to p-type gallium nitride

被引：7

作者：

Cha, Yu-Jung ^{[1
]}

Lee, Gil Jun ^{[1
]}

Lee, Yu Lim ^{[1
]}

Oh, Seung Kyu ^{[1
]}

Kwak, Joon Seop ^{[1
]}

机构：

[1] Sunchon Natl Univ, Dept Printed Elect Engn, Jeonnam 540742, South Korea

来源：

THIN SOLID FILMS | 2015年 / 591卷

关键词：

Radio-frequency superimposed direct-current sputtering; Indium tin oxide; Ohmic contacts; p-Type gallium nitride; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; ELECTRODES;

D O I：

10.1016/j.tsf.2015.04.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature-dependent contact resistivity of radio frequency (RF) superimposed direct current (DC) sputtered indium tin oxide (ITO) contacts to p-type gallium nitride (p-GaN) films as well as the temperature-dependent sheet resistivity of p-GaN films were investigated to understand the carrier transport mechanism of the sputtered ITO ohmic contacts to p-GaN. As the measurement temperature was decreased from 400 to 200 K, the contact resistivity increased by three orders of magnitude. Furthermore, the sheet resistivity of the p-GaN increased linearly with exp (1/Temperature(T))(1/4) from 200 to 340 K, indicating variable-range hopping (VRH) conduction via the Mg-related deep level defect (DLD) band. Based on the VRH conduction model, the effective barrier height between the sputtered ITO and the DLD band were calculated to be 0.12 eV, which is sufficiently low to explain the formation of the low contact resistivity of the RF superimposed DC sputtered ITO contacts to p-GaN (similar to 10(-2) Omega-cm(2)). (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：182 / 185

页数：4

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