Growth of InN at high temperature by halide vapor phase epitaxy

被引：27

作者：

Takahashi, N

Matsumoto, R

Koukitu, A

Seki, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6B期

关键词：

InN; vapor phase epitaxy; high growth temperature; 750 degrees C; InCl3-NH3; sapphire substrate; GaN buffer layer;

D O I：

10.1143/JJAP.36.L743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of InN at high temperature was tried on a GaN buffer/(0001)sapphire substrate by halide vapor phase epitaxy using InCl3 and NH3 sources. An InN epitaxial layer was obtained reproducibly at a growth temperature as high as 750 degrees C. The growth rate of hexagonal InN was 0.2 mu m/h at 750 degrees C. The X-ray full width at half-maximum (FWHM) value of the obtained InN showed a minimum (24.7 min) at the growth temperature of 700 degrees C. It was found that a high input partial pressure of InCl3 nas necessary for the growth of InN at high temperature.

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页码：L743 / L745

页数：3

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