Tunneling in the quantum Hall regime between orthogonal quantum wells

被引：17
作者：
Huber, M
Grayson, M
Rother, M
Deutschmann, RA
Biberacher, W
Wegscheider, W
Bichler, M
Abstreiter, G
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Walther Meissner Inst Tieftemp Forsch, D-8046 Garching, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
quantum Hall effect; tunneling;
D O I：
10.1016/S1386-9477(01)00283-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present experimental investigations of tunneling between two quantum wells forming a T-shaped structure. At zero magnetic field we observe a nonlinear tunnel characteristic,with clearly pronounced negative differential resistance. With magnetic field B, both quantum wells can independently be set in a quantum Hall state. We demonstrate spectroscopy of Quantum Hall bulk states in one B field orientation, and spectroscopy of edge states with the orthogonal orientation. The observed features can be explained assuming that transverse momentum is conserved during tunneling. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：125 / 128
页数：4
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