Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template

被引：66

作者：

Chen, Gang ^{[1
]}

Lichtenberger, H. ^{[1
]}

Bauer, G. ^{[1
]}

Jantsch, W. ^{[1
]}

Schaeffler, F. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 03期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1103/PhysRevB.74.035302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the initial stage of the two-dimensional to three-dimensional transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge wetting layer develops a complex morphology consisting exclusively of {105} and (001) facets. These results are attributed to a strain-driven step-meandering instability on the faceted sidewalls of the pits, and a step-bunching instability at the sharp concave intersections of these facets. Although both instabilities are strain driven, their coexistence becomes mainly possible by the geometrical restrictions in the pits. It is shown that the morphological transformation of the pit surface into low-energy facets has strong influence on the preferential nucleation of Ge islands at the flat bottom of the pits.

引用

页数：8

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