Cr3C2 and VC doped WC-Si3N4 composites prepared by spark plasma sintering

被引：14

作者：

Li, Yuanyuan ^{[1
]}

Zheng, Donghai ^{[1
]}

Li, Xiaoqiang ^{[1
]}

Qu, Shengguan ^{[1
]}

Yang, Chao ^{[1
]}

机构：

[1] S China Univ Technol, Natl Engn Res Ctr Near Net Shape Forming Technol, Guangzhou 510640, Peoples R China

来源：

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 2013年 / 41卷

关键词：

Tungsten carbide; Composite materials; Grain-growth inhibitor; Sintering; Mechanical properties; GRAIN-GROWTH; CEMENTED CARBIDES; BINDERLESS WC; TRIBOLOGICAL PROPERTIES; WC-ZRO2; COMPOSITES; TUNGSTEN CARBIDE; FINE WC; CONSOLIDATION; INHIBITION; VC/CR3C2;

D O I：

10.1016/j.ijrmhm.2013.07.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cr3C2 and VC doped WC-10 wt.% Si3N4 composites were prepared by spark plasma sintering. The influences of Cr3C2 and VC on densification behavior, grain growth and mechanical properties of the WC-Si3N4 composites were investigated. During densification of the WC-based materials, the Cr3C2 and VC additives assist the preliminary densification of solid-state-sintering, and mitigate the subsequent densification of liquid-sintering. The addition of Cr3C2 and VC shows an inhibitory effect against WC-grain growth, resulting in higher hardness for the WC-Si3N4 composites. Moreover, the inhibitors do not hinder the transformation of alpha to beta-Si3N4 and the growth of elongated beta-Si3N4 grains, which act as toughening agent for the composites. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：540 / 546

页数：7

共 27 条

[1]

[Anonymous], 1993, IM PROPLUS 5 1 0 20

[2] A CRITICAL-EVALUATION OF INDENTATION TECHNIQUES FOR MEASURING FRACTURE-TOUGHNESS .1. DIRECT CRACK MEASUREMENTS [J].