Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells

被引：16

作者：

Hao, Y. F. ^{[1
]}

Chen, Y. H. ^{[1
]}

Liu, Y. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

EPL | 2009年 / 85卷 / 03期

基金：

中国国家自然科学基金;

关键词：

INVERSION ASYMMETRY; HETEROSTRUCTURES; RASHBA; LAYERS;

D O I：

10.1209/0295-5075/85/37003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By means of the transfer matrix technique, interface-induced Rashba spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells which contain internal structure inversion asymmetry introduced by the insertion of AlxGa1-xAs step potential is investigated theoretically in the absence of electric field and magnetic field. The dependence of spin splitting on the well width, step width and Al concentration is investigated in detail. We find that the sign of the first excited subband spin splitting changes with well width and step width, and is opposite to that of the ground subband under certain conditions. The sign and strength of the spin splitting are shown to be sensitive to the components of the envelope function at three interfaces. Copyright (C) EPLA, 2009

引用

页数：5

共 21 条

[1] OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].

BYCHKOV, YA ;

RASHBA, EI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (33) :6039-6045

[2] Experimental and theoretical approach to spin splitting in modulation-doped InxGa1-xAs/InP quantum wells for B->0 [J].

Engels, G ;

Lange, J ;

Schäpers, T ;

Lüth, H .

PHYSICAL REVIEW B, 1997, 55 (04) :R1958-R1961

[3] Spin photocurrents in quantum wells [J].

Ganichev, SD ;

Prettl, W .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (20) :R935-R983

[4] Zero-field spin splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures [J].

Gilbertson, A. M. ;

Fearn, M. ;

Jefferson, J. H. ;

Murdin, B. N. ;

Buckle, P. D. ;

Cohen, L. F. .

PHYSICAL REVIEW B, 2008, 77 (16)

[5] Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers [J].

Grundler, D .

PHYSICAL REVIEW LETTERS, 2000, 84 (26) :6074-6077

[6] Spin-orbit-split subbands in IV-VI asymmetric quantum wells [J].

Hasegawa, MM ;

Silva, EADE .

PHYSICAL REVIEW B, 2003, 68 (20)

[7] K.P THEORY, EFFECTIVE-MASS APPROACH, AND SPIN SPLITTING FOR TWO-DIMENSIONAL ELECTRONS IN GAAS-GAALAS HETEROSTRUCTURES [J].

LASSNIG, R .

PHYSICAL REVIEW B, 1985, 31 (12) :8076-8086

[8] Effect of an InP/In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As heterostructures -: art. no. 045328 [J].

Lin, YP ;

Koga, T ;

Nitta, J .

PHYSICAL REVIEW B, 2005, 71 (04)

[9] Measurement of Rashba and Dresselhaus spin-orbit magnetic fields [J].

Meier, Lorenz ;

Salis, Gian ;

Shorubalko, Ivan ;

Gini, Emilio ;

Schoen, Silke ;

Ensslin, Klaus .

NATURE PHYSICS, 2007, 3 (09) :650-654

[10]

Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335

← 1 2 3 →