DC-bias and oscillation-amplitude dependent frequency-tuning characteristics of varactor-switching dual-band CMOS VCOs

被引：8
作者：
Jang, Sheng-Lyang [1 ]
Jain, Sanjeev [1 ]
Huang, Jhin-Fang [1 ]
Hsue, Ching-Wen [1 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2013年 / 55卷 / 06期
关键词：
CMOS; dual-resonance voltage-controlled oscillator (VCO); oscillating amplitude; tuning range; transition frequency; large signal; VOLTAGE-CONTROLLED OSCILLATOR; MOS VARACTORS; CONVERSION; RESONATOR;
D O I：
10.1002/mop.27574
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article studies the bias and oscillation-amplitude dependent RF tuning property of varactor-switching dual-band voltage-controlled oscillators (VCOs). The dual-resonance LC-tank n-core and p-core VCOs have been fabricated using 0.18 m CMOS technology, and they use dual-resonance LC resonator consisted of a parallel-tuned LC resonator and a series resonant resonator. The accumulation-mode MOS varactors are used. The RF circuit parameters such as oscillation frequency, tuning range, and transition frequency between low-band and high band as a function of varactor bias, supply voltage, and oscillation amplitude are examined experimentally. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:13891393, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27574
引用
收藏
页码：1389 / 1393
页数：5
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