Structure and Transport Properties of Bulk Nanothermoelectrics Based on Bi x Sb2-x Te3 Fabricated by SPS Method

被引：25
|
作者：
Bulat, L. P. [1 ]
Drabkin, I. A. [2 ]
Karatayev, V. V. [2 ]
Osvenskii, V. B. [2 ]
Parkhomenko, Yu. N. [2 ]
Lavrentev, M. G. [2 ]
Sorokin, A. I. [2 ]
Pshenai-Severin, D. A. [3 ]
Blank, V. D. [4 ]
Pivovarov, G. I. [4 ]
Bublik, V. T. [5 ]
Tabachkova, N. Yu. [5 ]
机构：
[1] Natl Res Univ ITMO, St Petersburg, Russia
[2] GIREDMET Ltd, Moscow, Russia
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] Technol Inst Superhard & New Carbon Mat, Troitsk, Russia
[5] Natl Univ Sci & Technol MISIS, Moscow, Russia
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
Thermoelectrics; bulk nanostructures; thermoelectric figure of merit; bismuth telluride; coherent dispersion areas; thermal conductivity; HIGH-THERMOELECTRIC PERFORMANCE; FIGURE-OF-MERIT; TELLURIDE; ALLOYS;
D O I：
10.1007/s11664-013-2536-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ball milling with subsequent spark plasma sintering (SPS) was used to fabricate bulk nanothermoelectrics based on Bi (x) Sb2-x Te-3. The SPS technique enables reduced size of grains in comparison with the hot-pressing method. The electrical and thermal conductivities, Seebeck coefficient, and thermoelectric figure of merit as functions of temperature and alloy composition were measured for different sintering temperatures. The greatest value of the figure of merit ZT = 1.25 was reached at the temperature of 90A degrees C to 100A degrees C in Bi0.4Sb1.6Te3 for sintering temperature of 450A degrees C to 500A degrees C. The volume and quantitative distributions of size of coherent dispersion areas (CDA) were calculated for different sintering temperatures. The phonon thermal conductivity of nanostructured Bi (x) Sb2-x Te-3 was investigated theoretically taking into account phonon scattering on grain boundaries and nanoprecipitates.
引用
收藏
页码：2110 / 2113
页数：4
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