Structure and Transport Properties of Bulk Nanothermoelectrics Based on Bi x Sb2-x Te3 Fabricated by SPS Method

被引：25
|
作者：
Bulat, L. P. [1 ]
Drabkin, I. A. [2 ]
Karatayev, V. V. [2 ]
Osvenskii, V. B. [2 ]
Parkhomenko, Yu. N. [2 ]
Lavrentev, M. G. [2 ]
Sorokin, A. I. [2 ]
Pshenai-Severin, D. A. [3 ]
Blank, V. D. [4 ]
Pivovarov, G. I. [4 ]
Bublik, V. T. [5 ]
Tabachkova, N. Yu. [5 ]
机构：
[1] Natl Res Univ ITMO, St Petersburg, Russia
[2] GIREDMET Ltd, Moscow, Russia
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] Technol Inst Superhard & New Carbon Mat, Troitsk, Russia
[5] Natl Univ Sci & Technol MISIS, Moscow, Russia
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
Thermoelectrics; bulk nanostructures; thermoelectric figure of merit; bismuth telluride; coherent dispersion areas; thermal conductivity; HIGH-THERMOELECTRIC PERFORMANCE; FIGURE-OF-MERIT; TELLURIDE; ALLOYS;
D O I：
10.1007/s11664-013-2536-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ball milling with subsequent spark plasma sintering (SPS) was used to fabricate bulk nanothermoelectrics based on Bi (x) Sb2-x Te-3. The SPS technique enables reduced size of grains in comparison with the hot-pressing method. The electrical and thermal conductivities, Seebeck coefficient, and thermoelectric figure of merit as functions of temperature and alloy composition were measured for different sintering temperatures. The greatest value of the figure of merit ZT = 1.25 was reached at the temperature of 90A degrees C to 100A degrees C in Bi0.4Sb1.6Te3 for sintering temperature of 450A degrees C to 500A degrees C. The volume and quantitative distributions of size of coherent dispersion areas (CDA) were calculated for different sintering temperatures. The phonon thermal conductivity of nanostructured Bi (x) Sb2-x Te-3 was investigated theoretically taking into account phonon scattering on grain boundaries and nanoprecipitates.
引用
收藏
页码：2110 / 2113
页数：4
相关论文
共 50 条
  • [21] Thermoelectric properties of n-type (Bi2Se3)x(Bi2Te3)1-x prepared by bulk mechanical alloying and hot pressing
    Yang, JY
    Aizawa, T
    Yamamoto, A
    Ohta, T
    JOURNAL OF ALLOYS AND COMPOUNDS, 2000, 312 (1-2) : 326 - 330
  • [22] Theoretical Study on Thermoelectric Properties and Doping Regulation of Mg3X2 (X = As, Sb, Bi)
    Wang, Xiaofang
    Lu, Yong
    Hu, Ziyu
    Shao, Xiaohong
    METALS, 2021, 11 (06)
  • [23] Structural characterization of Bi2Te3 and Sb2Te3 as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques
    Mansour, A. N.
    Wong-Ng, W.
    Huang, Q.
    Tang, W.
    Thompson, A.
    Sharp, J.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
  • [24] Thermoelectric and mechanical properties of Bi0.42Sb1.58Te3/SnO2 bulk composites with controllable ZT peak for power generation
    Li, Chun Yu
    Niu, Jian Xun
    Zhang, Jing Yi
    Zhang, Dai-Bing
    Cui, Wei Feng
    Wang, Yu
    Shi, Yong-Cai
    Ge, Zhen-Hua
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2024, 44 (02) : 961 - 969
  • [25] High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering
    Tan, Ming
    Hao, Yanming
    Deng, Yuan
    Chen, Jingyi
    APPLIED SURFACE SCIENCE, 2018, 443 : 11 - 17
  • [26] Evaluation of the Structure and Transport Properties of Nanostructured Antimony Telluride (Sb2Te3)
    M. Saleemi
    A. Ruditskiy
    M. S. Toprak
    M. Stingaciu
    M. Johnsson
    I. Kretzschmar
    A. Jacquot
    M. Jägle
    M. Muhammed
    Journal of Electronic Materials, 2014, 43 : 1927 - 1932
  • [27] Practical Contact Resistance Measurement Method for Bulk Bi2Te3-Based Thermoelectric Devices
    Gupta, Rahul P.
    McCarty, Robin
    Sharp, Jeff
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (06) : 1608 - 1612
  • [28] Practical Contact Resistance Measurement Method for Bulk Bi2Te3-Based Thermoelectric Devices
    Rahul P. Gupta
    Robin McCarty
    Jeff Sharp
    Journal of Electronic Materials, 2014, 43 : 1608 - 1612
  • [29] Transport properties of thermoelectric Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin films
    Bourgault, D.
    Schaechner, B.
    Garampon, C. Giroud
    Crozes, T.
    Caillault, N.
    Carbone, L.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 598 : 79 - 84
  • [30] Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment
    Buga, Sergei G.
    Serebryanaya, Nadejda R.
    Dubitskiy, Gennadii A.
    Semenova, Elena E.
    Aksenenkov, Viktor V.
    Blank, Vladimir D.
    HIGH PRESSURE RESEARCH, 2011, 31 (01) : 86 - 90
12345