A Monolithic DC-31 GHz Distributed Amplifier Using Cascode HBT-NMOS Gain Cell in 0.18 μm m SiGe Technology

被引：0

作者：

Chen, Si-Hua ^{[1
]}

Liu, Yu-Cheng ^{[1
]}

Weng, Shou-Hsien ^{[1
]}

Chang, Hong-Yeh ^{[1
]}

Chen, Kevin

Wu, Szu-Hsien

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan 32001, Taiwan

来源：

2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年

关键词：

Distributed amplifier (DA); heterojunction bipolar transistor (HBT); SiGe;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A monolithic dc-31 GHz distributed amplifier (DA) using cascode heterojunction bipolar transistor (HBT) - n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) gain cell in 0.18 mu m m SiGe process is presented in this paper. A HBT-NMOS cascode topology is employed as the gain stage of the DA due to its high cutoff frequency of the input matching transmission line and low Miller effect. The m-derived network and inductive peaking technique are adopted to further extend the bandwidth of the DA, and the dc bias network is also integrated in the chip. Between dc and 31 GHz, the proposed DA demonstrates an average small signal gain of 8.2 dB, and an output 1-dB compression point (P-1dB) of 8 dBm. Moreover, the DA is successfully evaluated with eye diagram measurement up to 12.5 Gbps.

引用

页码：211 / 213

页数：3

共 12 条

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