Impact of patterning strategy on mask fabrication beyond 32nm

被引：0

作者：

Mimotogi, Shoji ^{[1
]}

Higaki, Tomotaka ^{[1
]}

Kanai, Hideki ^{[1
]}

Tanaka, Satoshi ^{[1
]}

Satake, Masaki ^{[1
]}

Kitamura, Yosuke ^{[1
]}

Kodera, Katsuyoshi ^{[1
]}

Ishigo, Kazutaka ^{[1
]}

Kono, Takuya ^{[1
]}

Asano, Masafumi ^{[1
]}

Takahata, Kazuhiro ^{[1
]}

Inoue, Soichi ^{[1
]}

机构：

[1] TOSHIBA CORP Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XV, PTS 1 AND 2 | 2008年 / 7028卷

关键词：

double patterning; mask specification; low-k; 1; lithography; 22nm node;

D O I：

10.1117/12.793045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mask specifications of the pitch splitting type double patterning for 22nm node and beyond in logic devices have been discussed. The influences of the mask CD error and the mask induced overlay error on wafer CD have been investigated in both cases of bright field and dark filed. The specification for intra-layer overlay alignment is much smaller than inter-layer one. The specification of mask CD uniformity for dark is more challenging. In order to overcome the technology gap between single patterning and double patterning, many things will have to be improved.

引用

页数：9