Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors

被引：4

作者：

Tarasova, E. A. ^{[1
]}

Obolenskaya, E. S. ^{[1
]}

Hananova, A. V. ^{[1
]}

Obolensky, S. V. ^{[1
]}

Zemliakov, V. E. ^{[2
]}

Egorkin, V. I. ^{[2
]}

Nezhenzev, A. V. ^{[1
]}

Saharov, A. V. ^{[3
]}

Zazul'nokov, A. F. ^{[3
]}

Lundin, V. V. ^{[3
]}

Zavarin, E. E. ^{[3
]}

Medvedev, G. V. ^{[4
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod NNSU, Nizhnii Novgorod 603950, Russia

[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Zelenograd, Russia

[3] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] JSC RPE Salut, Nizhnii Novgorod, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

GAAS;

D O I：

10.1134/S1063782616120216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The sensitivity of classical n (+)/n (-) GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to gamma-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current-voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

引用

页码：1574 / 1578

页数：5

共 10 条

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Tarasova, E. A.
Khananova, A. V.
Obolensky, S. V.
Zemlyakov, V. E.
Sveshnikov, Yu. N.
Egorkin, V. I.
Ivanov, V. A.
Medvedev, G. V.
Smotrin, D. S.
[J]. SEMICONDUCTORS, 2016, 50 (03) : 326 - 333

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