Alloy segregation, quantum confinement, and carrier capture in self-ordered pyramidal quantum wires

被引：36

作者：

Zhu, Q. ^{[1
]}

Pelucchi, E. ^{[1
]}

Dalessi, S. ^{[1
]}

Leifer, K. ^{[1
]}

Dupertuis, M. -A. ^{[1
]}

Kapon, E. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2006年 / 6卷 / 05期

关键词：

D O I：

10.1021/nl060066d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The structure and photoluminescence (PL) characteristics of AlGaAs quantum wires self-formed by metallorganic vapor-phase epitaxy in inverted tetrahedral pyramids are reported. Capillarity-driven Ga-Al segregation yields vertical quantum wires (VQWRs) at the center of the pyramid, connected to more-weakly segregated vertical quantum wells ( VQWs) formed along their wedges. The segregation is evidenced in transmission electron microscope images and in the PL spectra of these structures. Transitions between quantum-confined electron and hole states in the VQWR are identified in the micro-PL spectra with energies in good agreement with model calculations. The temperature dependence of the micro-PL spectra clearly reveals efficient carrier capture into the VQWR from the VQWs, particularly at an intermediate temperature range (similar to 100 K) where carrier mobility is enhanced. These wires offer new possibilities for tailoring the confinement potential in one-dimensional systems.

引用

页码：1036 / 1041

页数：6

共 25 条

[1] One-dimensional excitonic states and lasing in highly uniform quantum wires formed by cleaved-edge overgrowth with growth-interrupt annealing [J].

Akiyama, H ;

Yoshita, M ;

Pfeiffer, LN ;

West, KW .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (35) :S3549-S3566

[2]

Bastard G., 1988, WAVE MECH APPL SEMIC

[3] High spatial resolution spectroscopy of a single V-shaped quantum wire [J].

Bellessa, J ;

Voliotis, V ;

Grousson, R ;

Wang, XL ;

Ogura, M ;

Matsuhata, H .

APPLIED PHYSICS LETTERS, 1997, 71 (17) :2481-2483

[4] Low-pressure OMCVD growth of AlGaAs vertical quantum wells on non-planar substrates [J].

Biasiol, G ;

Martinet, E ;

Reinhardt, F ;

Gustafsson, A ;

Kapon, E .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :600-604

[5] Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures [J].

Biasiol, G ;

Gustafsson, A ;

Leifer, K ;

Kapon, E .

PHYSICAL REVIEW B, 2002, 65 (20) :2053061-20530615

[6] Mechanisms of self-ordering of quantum nanostructures grown on nonplanar surfaces [J].

Biasiol, G ;

Kapon, E .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :2962-2965

[7]

Biasiol G., 1998, THESIS SWISS FEDERAL

[8] DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS [J].

BOSIO, C ;

STAEHLI, JL ;

GUZZI, M ;

BURRI, G ;

LOGAN, RA .

PHYSICAL REVIEW B, 1988, 38 (05) :3263-3268

[9] Diameter-controlled synthesis of single-crystal silicon nanowires [J].

Cui, Y ;

Lauhon, LJ ;

Gudiksen, MS ;

Wang, JF ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216

[10]

DALESSI S, UNPUB

← 1 2 3 →