Growth of low-dislocation-density AlN under Ga irradiation

被引：10

作者：

Nakajima, A ^{[1
]}

Furukawa, Y ^{[1
]}

Yokoya, H ^{[1
]}

Yamaguchi, S ^{[1
]}

Yonezu, H ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4A期

关键词：

MBE; SiC; GaN; AlGaN; AlN; dislocation; optical property; deep-UV;

D O I：

10.1143/JJAP.45.2422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple growth technique for the reduction of threading dislocation density of AlN tinder Ga irradiation during initial growth stage is proposed. In X-ray rocking curve measurements, linewidth of (0002) and (1102) diffraction for 500-nm-thick AlN were 100 and 260 arcsec, respectively. The threading-dislocation density of the AlN was estimated to be similar to 8 x 108 cm(-2) front the symmetric and asymmetric diffractions. The AlGaN/AlN multi-quantum well structure was grown on the high-quality AlN layer. By cathodoluminescence mapping measurements, intense deep-UV emission at 246 nm was observed from the area of more than 90%. The low dislocation density AlN is an ideal template for deep-UV optical devices.

引用

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页码：2422 / 2425

页数：4

相关论文

共 19 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction [J].

Chierchia, R ;

Böttcher, T ;

Heinke, H ;

Einfeldt, S ;

Figge, S ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :8918-8925

[3] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[4] Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose [J].

Henley, SJ ;

Cherns, D .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :3934-3939

[5]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[6] Initial stage of GaN nucleation on √3 x √3 R30°-Ga reconstructed 4H-SiC(0001)Si by molecular-beam epitaxy [J].

Jeganathan, K ;

Shimuzu, M ;

Okumura, H ;

Hirose, F ;

Nishizawa, S .

SURFACE SCIENCE, 2003, 527 (1-3) :L197-L202

[7] High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy [J].

Jeganathan, K ;

Kitamura, T ;

Shimizu, M ;

Okumura, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (1AB) :L28-L30

[8] RHEED FROM STEPPED SURFACES AND ITS RELATION TO RHEED INTENSITY OSCILLATIONS OBSERVED DURING MBE [J].

KAWAMURA, T ;

MAKSYM, PA .

SURFACE SCIENCE, 1985, 161 (01) :12-24

[9] Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy [J].

Koblmueller, G ;

Averbeck, R ;

Geelhaar, L ;

Riechert, H ;

Hösler, W ;

Pongratz, P .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :9591-9596

[10] Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers [J].

Lee, SR ;

West, AM ;

Allerman, AA ;

Waldrip, KE ;

Follstaedt, DM ;

Provencio, PP ;

Koleske, DD ;

Abernathy, CR .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3