Slope efficiency and spurious-free dynamic range of silicon Mach-Zehnder modulator upon carrier depletion and injection effects

被引:15
作者
Luo, Xianshu [1 ]
Tu, Xiaoguang [1 ]
Song, Junfeng [1 ,3 ]
Ding, Lu [2 ]
Fang, Qing [1 ]
Liow, Tsung-Yang [1 ]
Yu, Mingbin [1 ]
Lo, Guo-Qiang [1 ]
机构
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
关键词
OPTICAL MODULATOR; PHOTONICS; LINKS;
D O I
10.1364/OE.21.016570
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate the performances of a silicon PN-junction Mach-Zehnder modulator for analog application. The slope efficiency and spurious-free dynamic range (SFDR) of such a modulator upon carrier depletion and carrier injection effects are characterized and compared. Input RF frequency-dependence measurements show that the depletion-type modulator is usually with similar to 20 dB(.)Hz(2/3) higher SFDR comparing to the injection-type modulator, yet with an order-of-magnitude lower slope efficiency. For the depletion-type and injection-type modulators, the measured maximum SFDRs are respectively similar to 95 dB(.)Hz(2/3) and 75 dB(.)Hz(2/3), with maximum slope efficiency of 0.3 V-1 and 8 V-1. We numerically model the SFDR by using the experimentally extracted effective refractive index change, which shows good agreement with the measurements. (C) 2013 Optical Society of America
引用
收藏
页码:16570 / 16577
页数:8
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