Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

被引：6

作者：

Lee, Seonhaeng ^{[1
]}

Kim, Dongwoo ^{[1
]}

Kim, Cheolgyu ^{[1
]}

Lee, Chiho ^{[2
]}

Park, Jeongsoo ^{[2
]}

Kang, Bongkoo ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Pohang Gyeongbuk 790784, South Korea

[2] SK Hynix Inc, Memory Res & Dev Div, Inchon 467701, Gyeonggi, South Korea

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期

关键词：

Metals - MOS devices - Oxide semiconductors - Nanotechnology - Stresses - Impact ionization;

D O I：

10.1016/j.microrel.2012.06.067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Channel width dependence of mechanical stress effects on a nanoscale n-channel metal-oxide-semiconductor field-effect transistor using the shallow trench isolation (STI) is investigated. The results indicate that the mechanical stress induced by the STI enhances mobility, off currents, and the impact ionization significantly. 841 MPa of tensile stress is extracted using the subthreshold current method. In addition, the off-state stress is measured at 125 degrees C, and the narrow width device is more seriously degraded than wide width devices. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1949 / 1952

页数：4

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