High Performance Organic Field Effect Transistor with Tri-Gate

被引：0

作者：

Agrahari, Deep K. ^{[1
]}

Kondekar, Pravin N. ^{[1
]}

Yadav, Pankaj S. ^{[1
]}

Singh, Jawar ^{[1
]}

机构：

[1] PDPM Indian Inst Informat Technol Design & Mfg, Jabalpur 482005, Madhya Pradesh, India

来源：

FOURTH INTERNATIONAL CONFERENCE ON INTELLIGENT SYSTEMS, MODELLING AND SIMULATION (ISMS 2013) | 2013年

关键词：

Device geometry; organic field-effect transistor (OFET); 2-D simulation; THIN-FILM TRANSISTORS; INTEGRATION;

D O I：

10.1109/ISMS.2013.126

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, improvements are reported in terms of device performance by modification in the device geometry of bottom gate staggered organic field effect transistor (OFET). The device geometry with three independent gates is investigated at different gate voltages and detailed studies of the devices are simulated with the help of 2-D simulator (Atlas simulator by Silvaco). In the proposed device the electric field is improved and charge accumulation at the Pentacene-oxide interface are significantly enhanced. An analytical model for improved electric field is presented for this device. The simulated results show the improved drive current performance as compared to the single bottom gate staggered OFET at lower gate voltage. Due to lower operating voltage the device electrical stability and device operating time is improved.

引用

页码：627 / 630

页数：4

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