Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus

被引：3

作者：

Krol, Krystian ^{[1
,2
]}

Sochacki, Mariusz ^{[1
]}

Strupinski, Wlodzimierz ^{[3
]}

Racka, Katarzyna ^{[3
]}

Guziewicz, Marek ^{[4
]}

Konarski, Piotr ^{[2
]}

Misnik, Maciej ^{[2
]}

Szmidt, Jan ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Micro & Optoelect, PL-00662 Warsaw, Poland

[2] Tele & Radio Res Inst, PL-03450 Warsaw, Poland

[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[4] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

THIN SOLID FILMS | 2015年 / 591卷

关键词：

Silicon carbide; Thermal oxidation; POCl3; Interface properties; OXIDATION; STATES;

D O I：

10.1016/j.tsf.2015.08.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this article an additional annealing step was used to increase the quality of gate dielectric layers on silicon carbide obtained by thermal oxidation. The mixture of POCl3, N-2 and O-2 gases was used within temperature range of 950 degrees C-1100 degrees C. Abnormal oxide growth rate was observed during the annealing process. Significant improvement of trap density was achieved however the best results were obtained for lower range of annealing temperatures (950 degrees C-1000 degrees C). (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：86 / 89

页数：4

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