Analysis of SEE modes in ferroelectric random access memory using heavy ions

被引：1
作者：
Wei, Jia-Nan [1 ,2 ]
Guo, Hong-Xia [2 ,3 ]
Zhang, Feng-Qi [3 ]
Guo, Gang [4 ]
He, Chao-Hui [1 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
[2] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China
[3] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, Xian 710024, Peoples R China
[4] China Inst Atom Energy, Natl Innovat Ctr Radiat Applicat, Beijing 102413, Peoples R China
来源：
2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2019年
基金：
中国国家自然科学基金;
关键词：
Ferroelectric random access memory; Single event effect; Heavy ion; FRAM;
D O I：
10.1109/ipfa47161.2019.8984849
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The single event effects (SEE) in ferroelectric random access memories (FRAM) are investigated and the error modes are analyzed using heavy ions. Under the irradiation of heavy ions with high linear energy transfer (LET) values, data upsets are dominated by "0" to "1" upsets of which the cross section is larger than that of "1" to "0" upsets by an order of magnitude and most upsets are detected in addresses with the all "1" error pattern (FFFFH). In addition, most of the upsets occur in events that involve several consecutively accessed addresses. With the increase of ion LET, the percentage of the data upsets in events involving more than 10 consecutively accessed addresses increases monotonically.
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页数：5
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