Preparation and characterization of freestanding SiC(Ti, B) films derived from polycarbosilane with TiN and B as additives

被引：9

作者：

Yao, Rongqian ^{[1
,2
]}

Feng, Zude ^{[1
,2
]}

Chen, Lifu ^{[1
,2
]}

Zhang, Ying ^{[1
,2
]}

Zhang, Bingjie ^{[1
,2
]}

机构：

[1] Xiamen Univ, Coll Mat, Dept Mat Sci & Engn, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Fujian Prov Key Lab Adv Mat, Xiamen 361005, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2012年 / 32卷 / 10期

关键词：

Films; Microstructure-final; Mechanical properties; SiC; Microelectromechanical systems; HIGH-TENSILE STRENGTH; SILICON-CARBIDE FIBER; CHEMICAL VAPOR-DEPOSITION; MEMS APPLICATIONS; CERAMIC FIBERS; THIN-FILMS; SINGLE-CRYSTALLINE; HARSH ENVIRONMENTS; MATRIX COMPOSITES; 3C-SIC WAFERS;

D O I：

10.1016/j.jeurceramsoc.2012.02.004

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Freestanding SiC(Ti, B) films with high temperature resistance were fabricated from polymer precursor of polycarbosilane (PCS) blended with 0.26 wt% TiN and 0.74 wt% B powders. Results reveal that SiC(Ti, B) films with good mechanical properties are uniform and dense. After high temperature annealing at 1500 degrees C in argon, SiC(Ti, B) films exhibit better high temperature resistance as compared to SiC films without additives, which implies their potential applications in ultra-high temperatures (exceeding 1500 degrees C) microelectromechanical systems (MEMS). Sintering additives are effective in suppressing the growth of SiC crystals and decreasing the content of oxygen and free carbon, which is normally beneficial to enhance high temperature resistance of films. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2565 / 2571

页数：7

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