Evolution of superclusters and delocalized states in GaAs1-xNx

被引：13

作者：

Fluegel, B. ^{[1
]}

Alberi, K. ^{[1
]}

Beaton, D. A. ^{[1
]}

Crooker, S. A. ^{[2
]}

Ptak, A. J. ^{[1
]}

Mascarenhas, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 20期

关键词：

LOCALIZATION; ABSORPTION; BANDS;

D O I：

10.1103/PhysRevB.86.205203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1-xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

引用

页数：6

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