Studies of Ni-B as an electrochemical metal migration barrier

被引：7
作者：
Ho, SM
Lian, SM
Chen, KM
Pan, JP
Wang, TH
Hung, AN
机构：
[1] MIN HSIN INST TECHNOL & COMMERCE, HSINCHU, TAIWAN
[2] FIRST INT COMP INC, HSINCHU, TAIWAN
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1996年 / 19卷 / 02期
关键词：
resistance; electronmicroscope; PI-dielectric; mechanism;
D O I：
10.1109/95.506105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effectiveness of electroless Ni-B as a barrier metal to prevent the electrochemical migration between adjacent copper lines on a polyimide dielectric substrate was studied by measuring the resistance of the polyimide dielectric and by observing the electrochemical migration between the fine lines by reflective electronmicroscope after stress conditions. The rate-determining step associated with the electrochemical migration was also discussed.
引用
收藏
页码：202 / 207
页数：6
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