Thermal diffusion of Si atoms in delta-doped n-type InAlAs grown by metal-organic vapor-phase epitaxy

被引：2

作者：

Sugiyama, H ^{[1
]}

Yokoyama, H ^{[1
]}

Kobayashi, T ^{[1
]}

机构：

[1] NTT Corp, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 02期

关键词：

InAlAs; delta doping; Si; diffusion; MOVPE; InP; HEMT;

D O I：

10.1143/JJAP.43.534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the thermal diffusion of Si atoms in delta-doped n-type InAlAs grown by metal-organic vapor-phase epitaxy using secondary ion mass spectroscopy (SIMS). In the case of high sheet concentration of around 1 x 10(13) cm(-2), significant broadening of the Si profile was observed after postgrowth annealing in arsine ambient at >590degreesC. In contrast, broadening of the profile was suppressed at the concentration of about 3 x 1012 cm(-2). Diffusivity of Si atom in delta-doped InAlAs was estimated from the SIMS profiles.

引用

页码：534 / 535

页数：2

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