Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

被引：19

作者：

Bae, Si-Young ^{[1
]}

Lee, Jun-Yeob ^{[1
]}

Min, Jung-Hong ^{[1
]}

Lee, Dong-Seon ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 07期

关键词：

MOLECULAR-BEAM EPITAXY; SELECTIVE-AREA GROWTH; LATERAL OVERGROWTH; QUANTUM-WELLS; NANOWIRES; NONPOLAR; MOCVD;

D O I：

10.7567/APEX.6.075501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated selectively grown Ga-polar GaN nanorods by optimizing metal organic vapor phase epitaxy (MOVPE) growth parameters using continuous-and pulsed-mode approaches. Nucleation layers were grown using continuous mode with H-2 or N-2 as carrier gas, which resulted in pyramidal or hexagonal shapes, respectively. The growth mechanism of nanorods was further studied for the nucleation layer grown with the H-2 case, in which the pyramidal shape of the nucleation layer was observed to be flattened during the initial step of pulsed-mode growth and then evolved into nanorods by Ga clustering on the top c-plane. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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