Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

被引:24
作者
Chikoidze, E. [1 ]
Rogers, D. J. [2 ]
Teherani, F. H. [2 ]
Rubio, C. [3 ,4 ]
Sauthier, G. [3 ,4 ]
Von Bardeleben, H. J. [5 ]
Tchelidze, T. [6 ]
Ton-That, C. [7 ]
Fellous, A. [1 ]
Bove, P. [2 ]
Sandana, E. V. [2 ]
Dumont, Y. [1 ]
Perez-Tomas, A. [3 ,4 ]
机构
[1] Univ Paris Saclay, CNRS, Univ Versailles St Quentin Yvelines, Grp Etud Mat Condensee GEMaC, 45 Ave Etats Unis, F-78035 Versailles, France
[2] Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France
[3] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Barcelona, Spain
[4] Barcelona Inst Sci & Technol, Barcelona, Spain
[5] UPMC Univ Paris 6, Sorbonne Univ, Inst Nanosci Paris, CNRS, 4 Pl Jussieu, F-75005 Paris, France
[6] Ivane Javakhishvili Tbilisi State Univ, Dept Phys, Fac Exact & Nat Sci, 3 Ave I Tchavtchavadze, GE-0179 Tbilisi, Georgia
[7] Univ Technol Sydney, Sch Math & Phys Sci, POB 123, Broadway, NSW 2007, Australia
基金
美国国家科学基金会;
关键词
Electron accumulation; Ga2O3; Transport properties; Wide bandgap insulator; GALLIUM OXIDE; NEGATIVE MAGNETORESISTANCE; TRANSPARENT; TEMPERATURE; FABRICATION; SURFACE;
D O I
10.1016/j.mtphys.2018.11.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. Nominally undoped epitaxial beta-Ga2O3 thin films without any detectable defect (after a range of state-of-the-art techniques) showed the unexpectedly low resistivity of 3 x 10(-2) Omega cm which was found to be also resistant to high dose proton irradiation (2 MeV, 5 x 10(15) cm(-2) dose) and was largely invariant (metallic) over the phenomenal temperature range of 2 K up to 850 K. The unique resilience and stability of the electrical properties under thermal and highly ionizing radiation stressing, combined with the extended transparency range (thanks to the ultra-wide bandgap) and the already known toughness under high electrical field could open up new perspectives for use as expanded spectral range transparent electrodes (e.g., for UV harvesting solar cells or UV LEDs/lasers) and robust Ohmic contacts for use in extreme environments/applications and for novel optoelectronic and power device concepts. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:10 / 17
页数:8
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