Ultra-high-Q and wide temperature stable Ba(Mg1/3Tax)O3 microwave dielectric ceramic for 5G-oriented dielectric duplexer adhibition

被引：43

作者：

Ni, Lizheng ^{[1
]}

Li, Lingxia ^{[1
]}

Du, Mingkun ^{[1
]}

机构：

[1] Tianjin Univ, Key Lab Adv Ceram & Proc Technol, Inst Elect Mat & Components, Minist Educ,Sch Microelect, Tianjin 300072, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 844卷

基金：

中国国家自然科学基金;

关键词：

Ba(Mg1/3Ta0.675)O-3; Non-stoichiometry; Microwave dielectric properties; Ultra-high-Q; Wide temperature stability; CRYSTAL-STRUCTURE; RAMAN-SCATTERING; BA(MG1/3TA2/3)O-3; MICROSTRUCTURE; SUBSTITUTION; ORDER; MG; NONSTOICHIOMETRY; SPECTRA; MODES;

D O I：

10.1016/j.jallcom.2020.156106

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

With the deployment of 5G (5th generation wireless systems) worldwide, the development of dielectric duplexers more suitable for high-frequency applications is in full swing. Thus, the key material of dielectric duplexers, microwave dielectric ceramics, have attracted widespread attention from scholars. Here, high-performance microwave dielectric ceramics were prepared by adjusting the stoichiometry of Ta5+ of Ba(Mg1/3Tax)O-3 within 0.67-0.68. Typically, excellent resonance frequency stability (resonance frequency offset is less than 1.2 MHz) in a wide temperature range (-55-85 degrees C) is obtained by all samples, which extends to the negative temperature range compared to previous studies. Optimally, the Ba(Mg1/3Ta0.675)O-3 ceramic sintered at 1620 degrees C/12h and annealed at 1550 degrees C/10h is provided with the microwave dielectric properties of epsilon(r)similar to 25.021, Q similar to f similar to 244,155 GHz, tau(f) similar to-0.74 ppm/degrees C, achieving an 11% increase in Q x f value (compared to pure BMT). Comprehensive and excellent performance makes Ba(Mg1/3Ta0.675)O-3 ceramics furnish powerful material support for 5G dielectric duplexer applications. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：11

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