Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

被引：35

作者：

Gasser, I

Hsiao, L

Markowich, PA

Wang, S

机构：

[1] Univ Hamburg, Fachbereich Math, D-20146 Hamburg, Germany

[2] Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China

[3] Univ Vienna, Inst Math, A-1090 Vienna, Austria

来源：

JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS | 2002年 / 268卷 / 01期

关键词：

quasi-neutral limit; nonlinear drift-diffusion equations; entropy method;

D O I：

10.1006/jmaa.2001.7813

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates. (C) 2002 Elsevier Science (USA).

引用

页码：184 / 199

页数：16

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