Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

被引：60

作者：

Schwarz, C. ^{[1
]}

Yadav, A. ^{[1
]}

Shatkhin, M. ^{[1
]}

Flitsiyan, E. ^{[1
]}

Chernyak, L. ^{[1
]}

Kasiyan, V. ^{[2
]}

Liu, L. ^{[3
]}

Xi, Y. Y. ^{[3
]}

Ren, F. ^{[3
]}

Pearton, S. J. ^{[4
]}

Lo, C. F. ^{[5
]}

Johnson, J. W. ^{[5
]}

Danilova, E. ^{[6
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[5] Kopin Corp, Taunton, MA 02780 USA

[6] Inst Nucl Phys, Tashkent 100214, Uzbekistan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

基金：

美国国家科学基金会;

关键词：

GALLIUM NITRIDE; SEMICONDUCTORS; HARDNESS; GAN; DC;

D O I：

10.1063/1.4792240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors were irradiated with Co-60 gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792240]

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页数：3

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