High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation

被引：640

作者：

Kenney, Michael J. ^{[1
]}

Gong, Ming ^{[1
]}

Li, Yanguang ^{[1
]}

Wu, Justin Z. ^{[1
]}

Feng, Ju ^{[1
]}

Lanza, Mario ^{[1
]}

Dai, Hongjie ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

SCIENCE | 2013年 / 342卷 / 6160期

关键词：

THIN-FILMS; N-SILICON; SEMICONDUCTOR ELECTRODES; OXYGEN EVOLUTION; CELLS; SI; ELECTROCHEMISTRY; ELECTROLYSIS; CATALYSTS; PLANET;

D O I：

10.1126/science.1241327

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Silicon's sensitivity to corrosion has hindered its use in photoanode applications. We found that deposition of a similar to 2-nanometer nickel film on n-type silicon (n-Si) with its native oxide affords a high-performance metal-insulator-semiconductor photoanode for photoelectrochemical (PEC) water oxidation in both aqueous potassium hydroxide (KOH, pH = 14) and aqueous borate buffer (pH = 9.5) solutions. The Ni film acted as a surface protection layer against corrosion and as a nonprecious metal electrocatalyst for oxygen evolution. In 1 M aqueous KOH, the Ni/n-Si photoanodes exhibited high PEC activity with a low onset potential (similar to 1.07 volts versus reversible hydrogen electrode), high photocurrent density, and durability. The electrode showed no sign of decay after similar to 80 hours of continuous PEC water oxidation in a mixed lithium borate-potassium borate electrolyte. The high photovoltage was attributed to a high built-in potential in a metal-insulator-semiconductor-like device with an ultrathin, incomplete screening Ni/NiOx layer from the electrolyte.

引用

页码：836 / 840

页数：6

共 29 条

[1]

[Anonymous], 2011, J ELECT DEVICES

[2] Structure-Activity Correlations in a Nickel-Borate Oxygen Evolution Catalyst [J].