The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

被引：6

作者：

Caban, Piotr ^{[1
,2
]}

Kosciewicz, Kinga ^{[1
,4
]}

Strupinski, Wlodek ^{[1
]}

Wojcik, Marek ^{[1
]}

Gaca, Jaroslaw ^{[1
]}

Szmidt, Jan ^{[2
]}

Ozturk, Mustafa ^{[3
]}

Ozbay, Ekmel ^{[3
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[3] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[4] Warsaw Univ Technol, PL-02507 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Substrates; Low pressure metalorganic vapor phase epitaxy; Nitrides;

D O I：

10.1016/j.jcrysgro.2008.08.008

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of surface preparation and off-cut of 4H-SiC substrates on morphological and structural properties of GaN grown by low-pressure metalorganic vapor phase epitaxy was studied. Substrate etching has an impact on the Surface roughness of epilayers and improves its crystal quality. The GaN layers were characterized by atomic force microscopy (AFM) and high-resolution X-ray diffractometry (HRXRD) measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the surface morphology of epilayer. (C) 2008 Elsevier B.V. All rights reserved

引用

页码：4876 / 4879

页数：4

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