Giant enhancement of the n-type conductivity in single phase p-type ZnO:N thin films by intentionally created defect clusters and pairs

被引：32

作者：

Gautam, Subodh K. ^{[1
]}

Singh, R. G. ^{[2
]}

Kumar, V. V. Siva ^{[1
]}

Singh, Fouran ^{[1
]}

机构：

[1] Inter Univ Accelerator Ctr, New Delhi 110067, India

[2] Univ Delhi, Bhagini Nivedita Coll, Dept Phys, Delhi 110043, India

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 218卷

关键词：

Transparent Conducting oxides (TCOs); p- to n-type conductivity; Defects clusters and pairs; Energetic ions; OPTICAL-PROPERTIES; NITROGEN; EPITAXY; OXIDE;

D O I：

10.1016/j.ssc.2015.05.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The p-type conductivity with very high transparency in visible region of electromagnetic spectrum from nitrogen doped zinc oxide (ZnO:N) thin films is reported and the origin of p-type conductivity is attributed to the formation of complex zinc interstitial-nitrogen substituted oxygen (Zn-i-No) centers. The films are irradiated using energetic ions for inducing the high density of defects/defect clusters in the lattice for increasing the conductivity of the films. A systematic change in nature of charge carriers from p- to n-type and about four orders of magnitude enhancement of n-type conductivity is observed with increase in the fluence of irradiation. The intentionally induced complex defects such as Vo/Zn-i clusters and V-Zn-V-o defects pairs are mainly ascribed to the donor defects. These induced defects also act as the compensatory defects for the p-type charge carriers at low fluences and give rise to the giant enhancement in the n-type conductivity of films at higher fluence of irradiation. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：20 / 24

页数：5

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