Giant enhancement of the n-type conductivity in single phase p-type ZnO:N thin films by intentionally created defect clusters and pairs

被引：32

作者：

Gautam, Subodh K. ^{[1
]}

Singh, R. G. ^{[2
]}

Kumar, V. V. Siva ^{[1
]}

Singh, Fouran ^{[1
]}

机构：

[1] Inter Univ Accelerator Ctr, New Delhi 110067, India

[2] Univ Delhi, Bhagini Nivedita Coll, Dept Phys, Delhi 110043, India

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 218卷

关键词：

Transparent Conducting oxides (TCOs); p- to n-type conductivity; Defects clusters and pairs; Energetic ions; OPTICAL-PROPERTIES; NITROGEN; EPITAXY; OXIDE;

D O I：

10.1016/j.ssc.2015.05.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The p-type conductivity with very high transparency in visible region of electromagnetic spectrum from nitrogen doped zinc oxide (ZnO:N) thin films is reported and the origin of p-type conductivity is attributed to the formation of complex zinc interstitial-nitrogen substituted oxygen (Zn-i-No) centers. The films are irradiated using energetic ions for inducing the high density of defects/defect clusters in the lattice for increasing the conductivity of the films. A systematic change in nature of charge carriers from p- to n-type and about four orders of magnitude enhancement of n-type conductivity is observed with increase in the fluence of irradiation. The intentionally induced complex defects such as Vo/Zn-i clusters and V-Zn-V-o defects pairs are mainly ascribed to the donor defects. These induced defects also act as the compensatory defects for the p-type charge carriers at low fluences and give rise to the giant enhancement in the n-type conductivity of films at higher fluence of irradiation. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：20 / 24

页数：5

共 36 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2] Vacancy clustering and acceptor activation in nitrogen-implanted ZnO [J].

Borseth, Thomas Moe ;

Tuomisto, Filip ;

Christensen, Jens S. ;

Monakhov, Edouard V. ;

Svensson, Bengt G. ;

Kuznetsov, Andrej Yu. .

PHYSICAL REVIEW B, 2008, 77 (04)

[3] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[4] Persistent n-type photoconductivity in p-type ZnO [J].

Claflin, B ;

Look, DC ;

Park, SJ ;

Cantwell, G .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :16-22

[5] HOPPING CONDUCTION IN INSULATING RF-SPUTTERED ZINC-OXIDE FILMS [J].

GUPTA, V ;

MANSINGH, A .

PHYSICAL REVIEW B, 1994, 49 (03) :1989-1995

[6] Nitrogen-related local vibrational modes in ZnO:N [J].

Kaschner, A ;

Haboeck, U ;

Strassburg, M ;

Kaczmarczyk, G ;

Hoffmann, A ;

Thomsen, C ;

Zeuner, A ;

Alves, HR ;

Hofmann, DM ;

Meyer, BK .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1909-1911

[7] Modifications of ZnO thin films under dense electronic excitation [J].

Kumar, PMR ;

Kartha, CS ;

Vijayakumar, KP ;

Singh, F ;

Avasthi, DK ;

Abe, T ;

Kashiwaba, Y ;

Okram, GS ;

Kumar, M ;

Kumar, S .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)

[8] A transparent conducting oxide as an efficient middle electrode for flexible organic tandem solar cells [J].

Lee, Bong Joon ;

Kim, Hyo Jung ;

Jeong, Won-ik ;

Kim, Jang-Joo .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (03) :542-546

[9] Evidence for native-defect donors in n-type ZnO -: art. no. 225502 [J].

Look, DC ;

Farlow, GC ;

Reunchan, P ;

Limpijumnong, S ;

Zhang, SB ;

Nordlund, K .

PHYSICAL REVIEW LETTERS, 2005, 95 (22)

[10] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy [J].

Look, DC ;

Reynolds, DC ;

Litton, CW ;

Jones, RL ;

Eason, DB ;

Cantwell, G .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1830-1832

← 1 2 3 4 →