Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

被引：23

作者：

Han, Jaehoon ^{[1
]}

Zhang, Rui ^{[1
]}

Osada, Takenori ^{[2
]}

Hata, Masahiko ^{[2
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Sumitomo Chem Co Ltd, Chuo Ku, Tokyo 1040033, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 05期

关键词：

MOBILITY; GE; SI;

D O I：

10.7567/APEX.6.051302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron cyclotron resonance (ECR) plasma post-nitridation method has been investigated for improving Al2O3/SiGe metal-oxide-semiconductor (MOS) interfaces. We evaluated the interface trap density (D-it) of Al/Al2O3/Si0.75Ge0.25/p-Si MOS capacitors by the conductance method, showing that D-it of the Al2O3/SiGe interfaces was reduced to 3 x 10(11) cm(-2) eV(-1) at the minimum expense of equivalent oxide thickness (EOT). X-ray photoelectron spectroscopy (XPS) revealed that a SiGe-ON interfacial layer was formed between the Al2O3 and SiGe layers, which improved the interfacial properties through nitrogen passivation of SiGe interfaces. As a result, a superior Al2O3/SiGe MOS interface with a 0.2 nm EOT increase can be obtained by plasma post-nitridation. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 17 条

[1]

[Anonymous], IEDM, DOI DOI 10.1109/IEDM.2011.6131567

[2]

[Anonymous], IEDM DEC

[3] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[4] A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric [J].

Huang, Jidong ;

Fu, Jia ;

Zhu, Chunxiang ;

Tay, Andrew A. O. ;

Cheng, Zhi-Yuan ;

Leitz, Chris W. ;

Lochtefeld, Anthony .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[5] INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES [J].

HULL, R ;

BEAN, JC ;

WERDER, DJ ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1605-1607

[6] 20nm Gate Length Trigate pFETs on Strained SGOI for High Performance CMOS [J].

Hutin, L. ;

Casse, M. ;

Le Royer, C. ;

Damlencourt, J. -F. ;

Pouydebasque, A. ;

Xu, C. ;

Tabone, C. ;

Hartmann, J. -M. ;

Carron, V. ;

Grampeix, H. ;

Mazzocchi, V. ;

Truche, R. ;

Weber, O. ;

Batude, P. ;

Garros, X. ;

Clavelier, L. ;

Vinet, M. ;

Faynot, O. .

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, :37-38

[7] A GATE-QUALITY DIELECTRIC SYSTEM FOR SIGE METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

IYER, SS ;

SOLOMON, PM ;

KESAN, VP ;

BRIGHT, AA ;

FREEOUF, JL ;

NGUYEN, TN ;

WARREN, AC .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) :246-248

[8] Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors [J].

Lee, ML ;

Fitzgerald, EA ;

Bulsara, MT ;

Currie, MT ;

Lochtefeld, A .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)

[9] OXIDATION STUDIES OF SIGE [J].

LEGOUES, FK ;

ROSENBERG, R ;

NGUYEN, T ;

HIMPSEL, F ;

MEYERSON, BS .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1724-1728

[10] SIGE GATE OXIDE PREPARED AT LOW-TEMPERATURE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA [J].

LI, PW ;

YANG, ES .

APPLIED PHYSICS LETTERS, 1993, 63 (21) :2938-2940

← 1 2 →