Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

被引：22

作者：

Han, Jaehoon ^{[1
]}

Zhang, Rui ^{[1
]}

Osada, Takenori ^{[2
]}

Hata, Masahiko ^{[2
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Sumitomo Chem Co Ltd, Chuo Ku, Tokyo 1040033, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 05期

关键词：

MOBILITY; GE; SI;

D O I：

10.7567/APEX.6.051302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron cyclotron resonance (ECR) plasma post-nitridation method has been investigated for improving Al2O3/SiGe metal-oxide-semiconductor (MOS) interfaces. We evaluated the interface trap density (D-it) of Al/Al2O3/Si0.75Ge0.25/p-Si MOS capacitors by the conductance method, showing that D-it of the Al2O3/SiGe interfaces was reduced to 3 x 10(11) cm(-2) eV(-1) at the minimum expense of equivalent oxide thickness (EOT). X-ray photoelectron spectroscopy (XPS) revealed that a SiGe-ON interfacial layer was formed between the Al2O3 and SiGe layers, which improved the interfacial properties through nitrogen passivation of SiGe interfaces. As a result, a superior Al2O3/SiGe MOS interface with a 0.2 nm EOT increase can be obtained by plasma post-nitridation. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 17 条

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