Efficiency of Switched-inductor DC-DC Converter ICs across Process Technologies

被引:0
|
作者
Kim, Suhwan [1 ]
Rincon-Mora, Gabriel A. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | 2012年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Battery-powered electronics rely on integration and power efficiency for size and operational life. Switched-inductor converters play a critical role in this because most portable systems depend on dc-dc converters to supply power efficiently. Understanding the collective impact of shrinking dimensions on total power losses in a switching converter is therefore important when selecting a process technology for the power-supply chip, because the optimal choice results in longer battery life. This paper analyzes and validates the effects of finer CMOS technologies (which feature shorter minimum channel lengths L-MIN, higher oxide capacitance, and lower breakdown voltages) on the efficiency performance of switched-inductor dc-dc converters in continuous-and discontinuous-conduction modes (CCM and DCM). Simulation results show that conduction and gate-drive losses in switches rise with L-MIN(1.5) and bias and bandwidth-critical quiescent losses with L-MIN and L-MIN(3), respectively. In other words, because parasitic components and gate-drive voltages rise with L-MIN, efficiency drops with coarser technologies: E.g., the efficiencies of optimized 0.18-, 0.35-, and 0.5-mu m buck converters peaked at 93%, 89%, and 79%.
引用
收藏
页码:460 / 463
页数:4
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