Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

被引:57
作者
Jnawali, Giriraj [1 ]
Xiang, Yuan [2 ]
Linser, Samuel M. [1 ]
Shojaei, Iraj Abbasian [1 ]
Wang, Ruoxing [3 ]
Qiu, Gang [4 ]
Lian, Chao [5 ]
Wong, Bryan M. [5 ]
Wu, Wenzhuo [3 ]
Ye, Peide D. [4 ]
Leng, Yongsheng [2 ]
Jackson, Howard E. [1 ]
Smith, Leigh M. [1 ]
机构
[1] Univ Cincinnati, Dept Phys & Astron, Cincinnati, OH 45221 USA
[2] George Washington Univ, Dept Mech & Aerosp Engn, Washington, DC 20052 USA
[3] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[5] Univ Calif Riverside, Dept Chem & Environm Engn, Mat Sci & Engn Program, Riverside, CA 92521 USA
关键词
OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; ABSORPTION; TRANSITION; SPECTROSCOPY; GENERATION; PHONONS; STRAIN; GAP;
D O I
10.1038/s41467-020-17766-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H-4 and H-5 and the degenerate H-6 valence bands (VB) and the lowest degenerate H-6 conduction band (CB) as well as a higher energy transition at the L-point. Surprisingly, the degeneracy of the H-6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30ps while higher lying transitions observed near 1.2eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties. The complex band structure and carrier decay response upon photoexcitation of the chiral semiconductor tellurium remain to be unveiled. Here, the authors report unusual dynamic band modifications in Te near band-edge structure due to photoinduced symmetry breaking and strong anisotropy in carrier decay dynamics.
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页数:10
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