Stability of pentacene organic field effect transistors with a low-k polymer/high-k oxide two-layer gate dielectric

This paper reports on the processing and the characterization of pentacene organic field effect transistors (OFETs) with a two-layer gate dielectric consisting of a polymer (PMMA) on a high-k oxide (Ta2O5). This dielectric stack has been designed in view to combine low voltage operating devices, by the use of a high-k oxide which increases the charge in the accumulation channel and the gate capacitance, and highly stable devices which generally could be achieved with polymer dielectrics but not necessarily with strongly polar high-k oxides. Bi-layer dielectric devices were compared to those with only Ta2O5 or PMMA gate insulators. Bias stress at room temperature was used to assess the electrical stability. A very low operating voltage was achieved with Ta2O5 but these devices exhibit hysteresis and degraded characteristics upon bias stress. OFETs with PMMA revealed very stable but operate at rather a high voltage due to the low dielectric constant of PMMA. Reasonably stable devices operating at about 10 V could have been obtained with PMMA/Ta2O5 two-layer dielectric. The origin of observed threshold voltage shift and mobility decrease upon bias stress are discussed. (c) 2005 Elsevier B.V. All rights reserved.