Defects and localization in chemically-derived graphene

被引：43

作者：

Ciric, L. ^{[1
]}

Sienkiewicz, A. ^{[1
]}

Gaal, R. ^{[1
]}

Jacimovic, J. ^{[1
]}

Vaju, C. ^{[1
]}

Magrez, A. ^{[1
]}

Forro, L. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Complex Matter, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 19期

关键词：

ELECTRON-SPIN-RESONANCE; GRAPHITE OXIDE; CONDUCTION;

D O I：

10.1103/PhysRevB.86.195139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed electron spin resonance (ESR) measurements on a large assembly of graphene oxide (GO) and reduced graphene oxide (RGO) flakes. In GO samples the Curie tail is coming from 1.4 x 10(18) cm(-3) of localized spins. Although reduction of GO was expected to reestablish the pristine properties of graphene, no Pauli-like contribution was detected and only a low concentration of 1.2 x 10(16) cm(-3) spin carrying defects were measured. Our study, completed by resistivity measurements, shows that the carrier transport in RGO samples is dominated by hopping. The incomplete reduction of GO leaves behind a large number of defects, presumably the majority of which are ESR silent, causing the Anderson localization of the electronic states. Slight doping with potassium indicates the appearance of a Pauli contribution in the spin susceptibility.

引用

页数：6

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