Hall-Effect Measurements of Sol-Gel Derived CuInS2 Thin Films for Photovoltaic Applications

被引：4

作者：

Bourlier, Yoan ^{[2
,3
]}

Bernard, Remy ^{[1
]}

Lethien, Christophe ^{[2
,3
]}

Roussel, Pascal ^{[4
]}

Zegaoui, Malek ^{[2
,3
]}

Bouazaoui, Mohamed ^{[1
]}

Rolland, Nathalie ^{[2
,3
]}

Rolland, Paul Alain ^{[2
,3
]}

机构：

[1] Univ Lille 1 Sci & Technol, Lab Phys Lasers Atomes & Mol PhLAM, CNRS, UMR 8523, F-59655 Villeneuve Dascq, France

[2] Univ Lille 1 Sci & Technol, IEMN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Univ Lille 1 Sci & Technol, Inst Rech Composants Logiciels & Mat Informat Com, CNRS, USR 3380, F-59652 Villeneuve Dascq, France

[4] Univ Lille 1 Sci & Technol, UCCS, CNRS, UMR 8181, F-59655 Villeneuve Dascq, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

关键词：

ILGAR; CELLS;

D O I：

10.1143/APEX.5.125801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-gel method. Hence, the resistivity of the p-type CuInS2 films was found to be around 40 Omega.cm and the carrier density was in the 10(16) cm(-3) range. Furthermore, the UV-vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 14 条

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