Low-Resistivity 10 nm Diameter Magnetic Sensors

被引：62
|
作者：
Maqableh, Mazin M. [1 ]
Huang, Xiaobo [1 ]
Sung, Sang-Yeob [1 ]
Reddy, K. Sai Madhukar [1 ]
Norby, Gregory [1 ]
Victora, R. H. [1 ]
Stadler, Bethanie J. H. [1 ]
机构：
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
NANO LETTERS | 2012年 / 12卷 / 08期
基金：
美国国家科学基金会;
关键词：
Single nanowire resistivity; magnetic sensors; read sensors; magnetic recording; high density hard drives; CPP GMR; PLANE GIANT MAGNETORESISTANCE; ELECTRON-BEAM LITHOGRAPHY; TEMPLATE SYNTHESIS; BLOCK-COPOLYMERS; PATTERNED MEDIA; FABRICATION; NANOWIRES; RANGE; PATH; NANOPARTICLES;
D O I：
10.1021/nl301610z
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Resistivities of 5.4 mu Omega.cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 Omega and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.
引用
收藏
页码：4102 / 4109
页数：8
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