Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films

被引：28

作者：

Bartasyte, A. ^{[1
]}

Plausinaitiene, V. ^{[2
]}

Abrutis, A. ^{[2
]}

Murauskas, T. ^{[2
]}

Boulet, P. ^{[1
]}

Margueron, S. ^{[3
]}

Gleize, J. ^{[4
]}

Robert, S. ^{[1
]}

Kubilius, V. ^{[2
]}

Saltyte, Z. ^{[2
]}

机构：

[1] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54011 Nancy, France

[2] Univ Vilnius, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania

[3] Univ Lorraine, Lab Mat Opt Photon & Syst, SUPELEC, EA 4423, F-57070 Metz, France

[4] Univ Lorraine, LCP A2MC, EA 4632, F-57078 Metz, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 12期

关键词：

PULSED-LASER DEPOSITION; SINGLE-CRYSTALS; GROWTH; FERROELECTRICITY; SPECTROSCOPY; CONSTANTS; SAPPHIRE;

D O I：

10.1063/1.4752448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Residual stresses in LiNbO3 and LiTaO3 epitaxial thin films were evaluated taking into account Li nonstoichiometry by means of Raman spectroscopy and x-ray diffraction. The epitaxial films were grown on C-cut sapphire substrates by pulsed injection metal organic chemical vapour deposition. Clamping of the epitaxial films by the substrate induced a transfer from the in plane thermal expansion to the out of plane component. The temperature of the phase transition of clamped LiTaO3 films was close to that expected for a bulk sample. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752448]

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