BPN a new thick negative photoresist with high aspect ratio for MEMS applications

被引：3

作者：

Bourrier, D. ^{[1
,2
]}

Dilhan, M. ^{[1
,2
]}

Ghannam, A. ^{[1
,2
]}

Ourak, L. ^{[1
,2
]}

Granier, H. ^{[1
,2
]}

机构：

[1] CNRS, LAAS, F-31400 Toulouse, France

[2] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31400 Toulouse, France

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2013年 / 19卷 / 03期

关键词：

Aspect Ratio; High Aspect Ratio; Thick Copper; Negative Photoresist; Vertical Sidewall;

D O I：

10.1007/s00542-012-1648-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The BPN is a negative photoresist, sensitive in the UV at 365 nm and was previously dedicated for Wafer Level Packaging (WLP) applications. This photoresist offer the advantage of forming thick layers, however, it suffers from low aspect ratio (2:1 declared by the supplier). This work reports the optimization of BPN's technological process enabling forming 30-160 mu m thick molds for electroplating purposes. Our results revealed an aspect ratio as high as 16:1 while having vertical sidewalls using conventional photolithography.

引用

页码：419 / 423

页数：5

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