Analysis and Optimization of GaN Based Multi-Channels FinFETs

被引：10
作者：
Yu, Chun-Lin [1 ,2 ]
Lin, Chih-Hao [1 ,2 ]
Wu, Yuh-Renn [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2020年 / 19卷
关键词：
Aluminum gallium nitride; Wide band gap semiconductors; Gallium nitride; HEMTs; MODFETs; Charge carrier density; Doping; Tri-gate; FinFETs; multi-channels; power ampli-fiers; high transconductance; ELECTRON-MOBILITY TRANSISTORS; SURFACE-STATES; ALGAN/GAN; TECHNOLOGY; VOLTAGE; DEVICES; HEMTS; MODEL;
D O I：
10.1109/TNANO.2020.2998840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the design of multi-channels tri-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is optimized for high-power and high-frequency applications. With a full self-consistent 3D modeling on carrier transport and heating issues, the optimized design of multi-channel AlGaN/GaN layer thickness, modulation doping of channel layer, and fin width are investigated and the influences of self-heating effects had been studied. After a proper design, the performance of experimental work can be further improved. The optimized enhance mode FinFET with four channels shows a 3.2 times higher maximum transconductance compared to the single channel tri-gate device. And the performance of unit current gain frequency also has an improvement in multi-channel FinFETs.
引用
收藏
页码：439 / 445
页数：7
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