Effects of hot band annealing on the precipitation of copper sulfide in Fe-3%Si steel

被引:0
作者
Zhu, Yechao [1 ,2 ]
Mao, Jionghui [2 ]
Tan, Fatang [1 ]
Wang, Ruoping [2 ]
Qiao, Xueliang [1 ]
机构
[1] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
[2] Wuhan Iron & Steel Corp, Natl Engn Res Ctr Silicon Steel, Wuhan 430080, Hubai, Peoples R China
来源
NUMBERS, INTELLIGENCE, MANUFACTURING TECHNOLOGY AND MACHINERY AUTOMATION | 2012年 / 127卷
关键词
hot band annealing; Fe-3%Si steel; copper sulfide; precipitate;
D O I
10.4028/www.scientific.net/AMM.127.95
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hot bands of Fe-3%Si steel containing 0.24%Cu were characterized to examine the precipitation of copper sulfides following different heat treatment schedules. It was found that copper sulfides were dominantly in a sphere shape. From 950 degrees C to 1050 degrees C, the precipitates were the complex of copper sulfides and aluminum nitrides. The size of the precipitates decreased and the distribution increased as the temperature increased. However, from 1050 degrees C to 1150 degrees C, the precipitates size increased and the distribution decreased with the rise of temperature. The precipitates were mainly complex copper-manganese sulfides. When the sample was annealed at 1050 degrees C, air cooled to 900 degrees C and boiling water quenched, the most fine and disperse precipitates were obtained. The average size and distribution of the precipitates was 37nm and 2.72 mu m-2, respectively.
引用
收藏
页码:95 / +
页数:2
相关论文
共 8 条
  • [1] Chikuma K., 1984, 107 ISIJ M, V569, P265
  • [2] Jenkins Keith, 2008, J MAGNETISM MAGNETIC, V320, P2425
  • [3] Kumano Tomoji, 2006, J MAGNETISM MAGNETIC, V304, P603
  • [4] Liu Zhongzhu, 2004, ISIJ INT, V44, P1562
  • [5] Consideration of Zener drag effect by introducing a limiting radius for neighbourhood in grain growth simulation
    Maazi, N
    Rouag, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 243 (02) : 361 - 369
  • [6] Mishra Sanak, 1995, MAT SCI ENG B, V32, P180
  • [7] Ohata Yoshifumi, 2002, U.S. Patent, Patent No. [6,432,222B2, 643222B2]
  • [8] Shimazu T., 1984, 107 ISIJ M, V568, P264