Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAl

被引：35

作者：

Imort, I. -M. ^{[1
]}

Thomas, P. ^{[1
]}

Reiss, G. ^{[1
]}

Thomas, A. ^{[1
]}

机构：

[1] Univ Bielefeld, D-33615 Bielefeld, Nordrhein Westf, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

FILMS;

D O I：

10.1063/1.3678323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anomalous Hall effect (AHE) in the Heusler compounds Co2FeSi and Co2FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity rho(xx) as well as the anomalous Hall resistivity rho(ahe). Analyzing the scaling behavior of rho(ahe) in terms of rho(xx) points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678323]

引用

页数：3

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