Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAl

被引：34
作者：
Imort, I. -M. [1 ]
Thomas, P. [1 ]
Reiss, G. [1 ]
Thomas, A. [1 ]
机构：
[1] Univ Bielefeld, D-33615 Bielefeld, Nordrhein Westf, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
关键词：
FILMS;
D O I：
10.1063/1.3678323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The anomalous Hall effect (AHE) in the Heusler compounds Co2FeSi and Co2FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity rho(xx) as well as the anomalous Hall resistivity rho(ahe). Analyzing the scaling behavior of rho(ahe) in terms of rho(xx) points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678323]
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