Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications

被引：70

作者：

Aggarwal, S. ^{[1
]}

Almasi, H. ^{[1
]}

DeHerrera, M. ^{[1
]}

Hughes, B. ^{[1
]}

Ikegawa, S. ^{[1
]}

Janesky, J. ^{[1
]}

Lee, H. K. ^{[1
]}

Lu, H. ^{[1
]}

Mancoff, F. B. ^{[1
]}

Nagel, K. ^{[1
]}

Shimon, G. ^{[1
]}

Sun, J. J. ^{[1
]}

Andre, T. ^{[1
]}

Alam, S. M. ^{[1
]}

机构：

[1] Everspin Technol Inc, Chandler, AZ 85226 USA

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ's). Electrical short flows were used to guide the pMTJ stack development. We demonstrate reliable operation of the 1 Gb devices, including well-behaved STT write distributions, an endurance cycling lifetime up to at least 2x10(11) cycles, and data retention of 10 years at 85 degrees C. Testing results at -35 degrees C to 110 degrees C for the 1 Gb devices indicate good capability for industrial temperature range applications.

引用

页数：4

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