Doping dependence of the electronic structure of La1-xNaxMnO3 by resonant X-ray emission and X-ray absorption spectroscopy

被引：17

作者：

Bondino, F ^{[1
]}

Platé, M

Zangrando, M

Zacchigna, M

Cocco, D

Comin, A

Alessandri, I

Malavasi, L

Parmigiani, F

机构：

[1] Beamline BACH, TASC, INFM, Trieste, Italy

[2] Univ Pavia, Dipartimento Fis, I-27100 Pavia, Italy

[3] Sincrotrone Trieste, I-34012 Trieste, Italy

[4] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, Brescia, Italy

[5] Univ Brescia, Lab Strutturist Chim, Brescia, Italy

[6] Univ Pavia, Dipartimento Chim Fis M Rolla, I-27100 Pavia, Italy

[7] Univ Pavia, CNR, IENI, INSTM,Unita Pavia, I-27100 Pavia, Italy

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2004年 / 108卷 / 13期

关键词：

D O I：

10.1021/jp037224z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure of La1-xNaxMnO3 (x = 0, 0.08, and 0.15) thin films is investigated by resonant X-ray emission spectroscopy (RXES) and X-ray absorption spectroscopy (XAS). The excitation energy of the Mn dd transitions is derived. For different carrier doping concentrations, a significant increase in the emission of the low-energy excitations is observed. This finding is consistent with the less-pronounced structural distortion and the increased density of empty e(g)-like majority states in the lower part of the conduction band of the lightly doped samples.

引用

页码：4018 / 4023

页数：6

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